LSA Electronics

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LSA will be introducing a full line of 8 products over the next year. The first 3 products will be out in 2019 and are:
1) 200wpc GAN power amplifier (to begin shipping by November/Dec 2019)
2) Full function solid state balanced preamp w/phono stage, 5wpc Class A discrete headphone amp & upgradable DAC (shipping late December or early January)
3) GAN Integrated amp with upgradable DAC, phono stage & headphone amp (Hopefully shipping by the end of the year)


Voyager GAN 200 power amplifier

$2500.00


Our new LSA 200 watts/ch power amplifier, Voyager GAN 200, will ship in early to mid December. This is a breakthrough product featuring a GAN (Gallium Nitride) FET Output Power Stage as found in products selling for many times our $2500.00 price. The current competition sells for $32,000.00, $18,500.00 and $15,000.00. Our GAN Output Power Stage provides even better Audio performance through the reduced THD+N and IMD that is only afforded by the newest in eGaN FET Output Device technology.  Both of these enhancements are prohibitive with the legacy Silicon FET technology due to both the inherent limitations of the processes, and the resulting sacrifices in the desired efficiency of the system solutions.  These better efficiencies allow for increased Audio bandwidth without the “out-of-band” noise that is typical of legacy Class D amplifiers. These performance differences, along with an even better EMI/EMC profile are the result of the ‘almost ideal’ switching waveform that is achievable with this new eGaN FET technology.  The much faster switching times, the lack of ‘overshoots’ and ‘ringing’, along with the much reduced “Dead-Band” timing of the eGaN FET Output Stage allows for unmatched linearity across the entire Modulation range.  With the significant reduction in “ON” resistance and Gate capacitance of the eGaN FET, our amplifiers provide unmatched “Open-Loop” Output Impedance and THD/IMD, resulting in the need for very low feedback – further reducing any issues caused by complex Output Speaker loads and Back-EMF from the transducers.  This means you get a greater depth of field, blacker blacks and greater transparency than standard ICE or Hypex Class D type amps.

Figure X:  Comparison of Legacy Silicon Switching w/eGaN FET switching
 

This technology fixes all the issues that Class D amps have historically displayed.
AND
Get up to $1000.00 or more in trade for any working amp towards this new technology.
Call us to discuss this superb new amp at 770-667-5633

   
 
                                    
 
Here is some info on the amp:

• 200W per Channel into 8 ohms
• 400W per Channel into 4 ohms
• Sensitivity: Two volts input for 200 watts out
• > 108dB SNR and Dynamic Range
• < 0.01% THD+N (8ohms, 200W, 20Hz to 20kHz)
• Distortion open loop with no feedback < 0.08% THD+N (8 ohms, 200W, 20Hz to 20kHz)
• Frequency Response (8Ω) 20Hz-20kHz +/-0.5dB/ 20-40KHZ at -3Db
• Direct coupled with no output caps

96% Efficiency Reduces Heat and System Size
• Integrated, non-intrusive over-current, short-circuit and over-voltage protection